一、个人简介

廖敏，男，汉族，中共党员，博士，博士生导师。2006年和2009年分别本科和硕士毕业于湘潭大学微电子学专业和微电子学与固体电子学专业。2012年在日本东京工业大学(Tokyo Institute of Technology)获得物理电子系统工程(Electronics and Applied Physics)博士学位，博士期间获得了日本学术振兴会 (JSPS) 博士特别研究员奖励(DC2)。2012年至2015年在日本东京工业大学从事博士后研究工作，后被该校聘为助理教授(Assistant Professor)。2016年2月入选为湖南省2015年度“百人计划”（青年百人计划）专家。2018年入选湖南省“湖湘青年英才”支持计划。长期从事氧化物功能材料、器件与芯片的教学、科研和人才培养工作。主持国家自然科学基金委青年、面上和优秀青年基金项目及国家其他部门重点项目多项。在材料与微电子领域的权威期刊Adv. Mater.、Adv. Funct. Mater.、IEEE Electron Device Lett.和IEEE Trans. Electron Device等发表论文50余篇；申请发明专利30余项，获得美国发明专利授权1项、国家发明专利授权13项。

二、学习工作经历

●   2016年4月—至今，湘潭大学，湖南省青年百人计划专家，教授

●   2015年4月—2016年3月，日本，东京工业大学，助理教授

●   2012年10月—2015年3月，日本，东京工业大学，博士后

●   2009年10月—2012年9月，日本，东京工业大学，物理电子系统工程，工学博士

●   2006年9月—2009年6月，湘潭大学，微电子学与固体电子学，工学硕士

●   2002年9月—2006年6月，湘潭大学，微电子学，学士

三、主讲课程

半导体物理与器件、微电子工艺

四、研究方向

●   铁电存储器

●   氧化物半导体器件

五、获奖情况

1. 2011年，日本学术振兴会(JSPS)特别研究员(DC2)奖励，日本学术振兴会

2. 2016年，湖南省“青年百人计划”，湖南省委组织部

3. 2018年，选湖南省“湖湘青年英才”支持计划

4. 2019年，湖南省“优秀研究生导师团队”奖(集体奖)

六、科研项目

1. 与CMOS工艺兼容的HfO2基FeFET存储窗口非定常性的畴诱导机制(52072324)，国家自然科学基金面上项目，主持

2. TiN/HfO2基铁电/β-Ga2O3存储结构的制备与界面调控研究(51702273)，国家自然科学基金青年项目，主持

3. XXX铁电存储器，JKW项目，主持

4. 新型XXX技术，ZFB项目，主持

5. 与CMOS工艺兼容的宇航级铁电存储器，湖南省科技厅，主持

6. 氧化铪基铁电存储器的CMOS后栅工艺兼容性关键技术研究，湖南省科技厅湖湘青年英才项目(2018RS3087)，主持

7. 与硅工艺平台兼容的新型氧化铪基FeFET的集成工艺研究，湖南省重点研发计划(2016WK2014)，主持

七、代表性论著

1.        Changfan Ju, Binjian Zeng*, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng*, Shuaizhi Zheng, Yichun Zhou, Min Liao*. Improved ferroelectric properties of CMOS back-end-of-line compatible Hf_0.5Zr_0.5O₂ thin films by introducing dielectric layers[J]. Journal of Materiomics, 2023. DOI: https://doi.org/10.1016/j.jmat.2023.05.013 (Available online 24 June 2023)

2.        Puqi Hao#, Huashan Li#, Binjian Zeng*, Qijun Yang, Tianqi Tang, Shuaizhi Zheng, Qiangxiang Peng, Jiajia Liao, Sirui Zhang, Yichun Zhou, and Min Liao*. Effects of thickness scaling on the dielectric properties of Hf_0.5Zr_0.5O₂ ferroelectric thin films[J]. Journal of Materials Science: Materials in Electronics, 2023, 34(13): 1089.

3.        Puqi Hao#, Shuaizhi Zheng#, Binjian Zeng*, Tao Yu, Zhibin Yang, Luocheng Liao, Qiangxiang Peng, Qijun Yang, Yichun Zhou, Min Liao*. Highly enhanced polarization switching speed in HfO₂-based ferroelectric thin films via a composition gradient strategy [J]. Advanced Functional Materials, 2023: 2301746.

4.        Sirui Zhang, Qinghua Zhang*, Fanqi Meng, Ting Lin, Binjian Zeng, Lin Gu, Min Liao*, and Yichun Zhou*. Domain Wall Evolution in Hf_0.5Zr_0.5O₂ Ferroelectrics under Field-Cycling Behavior[J]. Research, 2023, 6: 0093.

5.        Jiajia Liao#, Siwei Dai#, Renci Peng, Jiangheng Yang, Binjian Zeng, Min Liao*, Yichun Zhou*. HfO₂-based ferroelectric thin film and memory device applications in the post-Moore era: A review[J]. Fundamental Research, 2023, 3(3): 332-345.

6.        Siwei Dai, Qijun Yang, Binjian Zeng, Shuaizhi Zheng, Xiangli Zhong, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jiajia Liao*, Min Liao*, and Yichun Zhou. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors[J]. ACS Applied Materials & Interfaces, 2022, 14(45): 51459-51467.

7.        Chen Liu, Qijun Yang, Binjian Zeng, Yongquan Jiang, Shuaizhi Zheng, Jiajia Liao, Siwei Dai, Xiangli Zhong, Yichun Zhou, and Min Liao*. Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications[J]. Advanced Functional Materials, 2022, 32(49): 2209604.

8.        Chen Liu, Binjian Zeng*, Siwei Dai, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jincheng Zhang, Min Liao*, Yichun Zhou. Robustly stable intermediate memory states in HfO₂−based ferroelectric field−effect transistors [J]. Journal of Materiomics, 2022, 8(3): 685-692.

9.        Pingan Zhou, Binjian Zeng, Wanzhen Yang, Jiajia Liao, Fanqi Meng, Qinghua Zhang, Lin Gu, Shuaizhi Zheng, Min Liao*, Yichun Zhou*. Intrinsic 90° charged domain wall and its effects on ferroelectric properties [J]. Acta Materialia, 2022, 232: 117920.

10.    Sirui Zhang, Meixiong Zhu, Jagadeesh Suriyaprakash, Jinmei Liu, Tao Du, Yujia Wang, Changbai Long*, and Min Liao*. Flux-Closure Domains in PbTiO₃/SrTiO₃ Multilayers Mediated without Tensile Strain [J]. The Journal of Physical Chemistry C, 2022, 126(9): 4630-4637.

11.    Can Huang, Yuke Zhang, Shuaizhi Zheng, Qiong Yang*, and Min Liao*. Interface Effects Induced by a ZrO₂ Seed Layer on the Phase Stability and Orientation of HfO₂ Ferroelectric Thin Films: A First-Principles Study[J]. Physical Review Applied, 2021, 16(4): 044048.

12.    Chen Liu, Wenwu Xiao, Yue Peng, Binjian Zeng*, Shuaizhi Zheng, Lu Yin, Qiangxiang Peng, Xiangli Zhong, Min Liao*, and Yichun Zhou. Hf_0.5Zr_0.5O₂-based ferroelectric-field-effect transistors with HfO₂ seed layers for radiation hard non-volatile memory applications [J]. IEEE Transactions on Electron Devices, 2021, 68(9): 4368-4372.

13.    Pengfei Hou, Cheng Chen, Bo Li, Shuaizhi Zheng, Jinbin Wang, Xiangli Zhong, and Min Liao*. Mechanical manipulation of nano‐twinned ferroelectric domain structures for multilevel data storage[J]. Advanced Functional Materials, 2021, 31(19): 2011029.

14.    Binjian Zeng, Chen Liu, Siwei Dai, Pingan Zhou, Keyu Bao, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Min Liao*, and Yichun Zhou. Electric field gradient-controlled domain switching for size effect-resistant multilevel operations in HfO₂-based ferroelectric field-effect transistor [J]. Advanced Functional Materials. 2021, 31(17): 2011077.

15.    Shuaizhi Zheng, Zidong Zhao, Zhaotong Liu, Binjian Zeng, Lu Yin, Qiangxiang Peng, Min Liao*, and Yichun Zhou*. Improvement of remanent polarization of CeO₂-HfO₂ solid solution thin films on Si substrates by chemical solution deposition [J]. Applied Physics Letters, 2020, 117(21): 212904.

16.    Yang Wang^#, Xiaoyuan Bai^#, Junwei Chu^#, Hongbo Wang, Gaofeng Rao, Xinqiang Pan, Xinchuan Du, Kai Hu, Xuepeng Wang, Chuanhui Gong, Chujun Yin, Chao Yang, Chaoyi Yan, Chunyang Wu, Yao Shuai, Xianfu Wang*, Min Liao*, and Jie Xiong*. Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors[J]. Advanced Materials, 2020, 32(46): 2005353.

17.    Wei Chen^#, Yin Hu^#, Weiqiang Lv^#, Tianyu Lei, Xianfu Wang, Zhenghan Li, Miao Zhang, Jianwen Huang, Xinchuan Du, Yichao Yan, Weidong He, Chen Liu, Min Liao*, Wanli Zhang, Jie Xiong*, and Chenglin Yan*. Lithiophilic montmorillonite serves as lithium ion reservoir to facilitate uniform lithium deposition[J]. Nature Communications, 2019, 10(1): 4973.

18.    He Sun^#, Mengfan Wang^#, Xinchuan Du^#, Yu Jiao, Sisi Liu, Tao Qian, Yichao Yan, Chen Liu, Min Liao*, Qinghua Zhang, Linxing Meng, Lin Gu, Jie Xiong*, and Chenglin Yan*. Modulating the d-band center of boron doped single-atom sites to boost the oxygen reduction reaction[J]. Journal of Materials Chemistry A, 2019, 7(36): 20952-20957.

19.    Wenwu Xiao#, Chen Liu#, Yue Peng, Shuaizhi Zheng*, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao*, and Yichun Zhou. Memory window and endurance improvement of Hf_0.5Zr_0.5O₂-based FeFETs with ZrO₂ seed layers characterized by fast voltage pulse measurements [J]. Nanoscale Research Letters, 2019, 14(1): 1-7.

20.    Chuanhui Gong^#, Junwei Chu^#, Chujun Yin^#, Chaoyi Yan, Xiaozong Hu, Shifeng Qian, Yin Hu, Kai Hu, Jianwen Huang, Hongbo Wang, Yang Wang, Peihua Wangyang, Tianyu Lei, Liping Dai, Chunyang Wu, Bo Chen, Chaobo Li*, Min Liao*, Tianyou Zhai, and Jie Xiong*. Self‐confined growth of ultrathin 2D nonlayered wide‐bandgap semiconductor CuBr flakes[J]. Advanced Materials, 2019, 31(36): 1903580.

21.    Wenwu Xiao#, Chen Liu#, Yue Peng, Shuaizhi Zheng*, Qian Feng, Chunfu Zhang*, Jincheng Zhang, Yue Hao, Min Liao*, and Yichun Zhou. Thermally stable and radiation hard ferroelectric Hf_0.5Zr_0.5O₂ thin films on muscovite mica for flexible nonvolatile memory applications [J]. ACS Applied Electronic Materials, 2019, 1(6): 919-927.

22.    Binjian Zeng, Min Liao*, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, and Yichun Zhou*. 2-Bit/cell operation of Hf_0.5Zr_0.5O₂ based FeFET memory devices for NAND applications [J]. IEEE Journal of the Electron Devices Society, 2019, 7: 551-556.

23.    Congbing Tan, Jun Ouyang*, Xiangli Zhong, Jinbin Wang*, Min Liao*, Lunjun Gong, Chuanlai Ren, Gaokuo Zhong, Shuaizhi Zheng, Hongxia Guo, and Yichun Zhou. Crystallographically engineered hierarchical polydomain nanostructures in perovskite ferroelectric films[J]. Acta Materialia, 2019, 171: 282-290.

24.    Binjian Zeng, Min Liao*, Jiajia Liao, Wenwu Xiao, Qiangxiang Peng, Shuaizhi Zheng, and Yichun Zhou*. Program/erase cycling degradation mechanism of HfO₂-based FeFET memory [J]. IEEE Electron Device Letters, 2019, 40(5): 710-713.

25.    Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng*, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao*, and Yichun Zhou. Performance improvement of Hf_0.5Zr_0.5O₂-based ferroelectric-field-effect transistors with ZrO₂ seed layers [J]. IEEE Electron Device Letters, 2019, 40(5): 714-717.

26.    Heng Liu, Shuaizhi Zheng*, Qiang Chen, Binjian Zeng, Jie Jiang, Qiangxiang Peng, Min Liao*, and Yichun Zhou. Structural and ferroelectric properties of Pr doped HfO₂ thin films fabricated by chemical solution method [J]. Journal of Materials Science: Materials in Electronics, 2019, 30(6): 5771-5779.

27.    Binjian Zeng, Wenwu Xiao, Jiajia Liao, Heng Liu, Min Liao*, Qiangxiang Peng, Shuaizhi Zheng, and Yichun Zhou*. Compatibility of HfN metal gate electrodes with Hf_0.5Zr_0.5O₂ ferroelectric thin films for ferroelectric field-effect transistors [J]. IEEE Electron Device Letters, 2018, 39(10): 1508-1511.

28.    Wenwu Xiao, Yue Peng, Shuaizhi Zheng, Qian Feng*, Hong Zhou, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao*, and Yichun Zhou. Integration and electrical properties of ferroelectric Hf_0.5Zr_0.5O₂ thin film on bulk β-Ga₂O₃(-201) substrate for memory applications[J]. IEEE Electron Device Letters, 2018, 39(10): 1504-1507.

29.    Min Liao, Seiji Takemoto, Zewen Xiao, Yoshitake Toda, Tomofumi Tada, Shigenori Ueda, Toshio Kamiya, and Hideo Hosono*, Difficulty of carrier generation in orthorhombic PbO, Journal of Applied Physics, 2016, 119(16): 165701-1–165701-7.

30.    Min Liao, Zewen Xiao, Fan-Yong Ran, Hideya Kumomi, Toshio Kamiya, and Hideo Hosono*, Effects of Pb doping on hole transport properties and thin-film transistor characteristics of SnO thin films, ECS Journal of Solid State Science and Technology, 2015, 4(3): Q26-Q30.

31.    Min Liao*, Hiroshi Ishiwara*, and Shun-Ichiro Ohmi*, Excellent current drivability and environmental stability in room-temperature-fabricated pentacene-based organic field-effect transistors with HfO₂ gate insulators, IEEE Transactions on Electron Devices, 2014, 61(2): 569-575.

32.    Min Liao*, Hiroshi Ishiwara*, and Shun-Ichiro Ohmi*, Fully room-temperature-fabricated low-voltage operating pentacene-based organic field-effect transistors with HfON gate insulator, IEEE Electron Device Letters, 2011, 32(11): 1600-1602.

33.    Min Liao, Hiroshi Ishiwara, and Shun-Ichiro Ohmi*, Room-temperature fabrication of HfON gate insulator for low-voltage-operating pentacene-based organic field-effect transistors, Japanese Journal of Applied Physics, 2012, 51(4): 04DK01-1–04DK01-4.

34.    Min Liao*, Hiroshi Ishiwara, and Shun-Ichiro Ohmi*, Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator, IEICE Electronics Express, 2011, 8(18): 1461-1466.

35.    Min Liao*, Hiroshi Ishiwara, and Shun-Ichiro Ohmi*, Growth mechanism of pentacene on HfON gate insulator and its effect on electrical properties of organic field-effect transistors, IEICE Transactions on Electronics, 2012, E95-C(5): 885-890.

36.    Min Liao, Xiangli Zhong*, Jinbin Wang, Shuhong Xie, and Yichun Zhou, Structure and electrical properties of Bi_3.15Nd_0.85Ti₃O₁₂ nanofibers synthesized by electrospinning and sol-gel method, Applied Physics Letters, 2010, 96(1): 012904-1–012904-3.

37.    Min Liao, Xiangli Zhong*, Yi Qiao, Jinbin Wang, Yichun Zhou, and Hui Liao, Effects of film thickness on microstructure and properties of Bi_3.15Nd_0.85Ti₃O₁₂ thin films fabricated by chemical solution deposition, Journal of Alloys and Compounds, 2009, 487(1-2): 331-334.

38.    Min Liao, Xiangli Zhong*, Jinbin Wang, Yichun Zhou, and Hui Liao, Effects of CoFe₂O₄ content on the properties of nanoparticulate Bi_3.15Nd_0.85Ti₃O₁₂–CoFe₂O₄ thin films, Scripta Materialia, 2008, 58(9): 715-718.

39.    Min Liao, Xiangli Zhong*, Jinbin Wang, Hailong Yan, Jianping He, Yi Qiao, and Yichun Zhou, Nd-substituted bismuth titanate ferroelectric nanofibers by electrospinning, Journal of Crystal Growth, 2007, 304(1): 69-72.

40.      

八、知识产权与成果转化

1.      Hafnium oxide-based ferroelectric field effect transistor and manufacturing method thereof，2022年，美国，US11502083B2

2.      一种铁电电容器和存储单元及其制备方法，2023年，中国，ZL202011146593.4

3.      一种三维结构的NAND铁电存储单元及其制备方法，2022年，中国，ZL202011027562.7

4.      一种镨离子掺杂的二氧化铪铁电薄膜的制备方法，2020年，中国，ZL201810813379.6

5.      一种PEALD低温制备铁电薄膜的方法及铁电薄膜, 2020年, 中国, ZL201811002707.0

6.      一种铁电场效应晶体管及其制备方法，2020年，中国，ZL201710426282.5

7.      一种柔性铁电薄膜晶体管及其制备方法，2022年，中国，ZL201810237396.X

8.      一种铁电场效应晶体管及其制备方法，2022年，中国，ZL201910764404.0

9.      一种铁电薄膜晶体管及其制备方法，2021年，中国，ZL201810237772.5

10.   一种铁电场效应晶体管及其制备方法，2021年，中国，ZL201710426277.4

11.   一种铁电栅场效应晶体管及其制备方法，2021年，中国，ZL201910234441.0

12.   一种铁电薄膜晶体管及其制备方法，2020年，中国，ZL201710426279.3

13.   一种基于铁电栅调控的肖特基二极管及其制备方法，2020年，中国，ZL201810981444.6

14.   一种氧化铪基铁电栅场效应晶体管及其制备方法，2020年，中国，ZL201910233623.6